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CYStech Electronics Corp.
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1/8
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC3585G6
Description
The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
* Simple drive requirement * Low gate charge * Low on-resistance * Fast switching speed * Pb-free package
Equivalent Circuit
MTC3585G6
Outline
TSOP-6
D1
S1
D2
GGate SSource DDrain
G1
S2
G2
MTC3585G6
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 C (Note 1) Continuous Drain Current @TA=70 C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID ID IDM Pd Tj, Tstg Rth,ja
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 2/8
Limits N-channel P-channel 20 -20 12 12 3.5 -2.5 2.8 -1.97 10 -10 1.14 0.01 -55~+150 110
Unit V V A A A W W / C C C/W
Note : 1.Surface mounted on 1 in copper pad of FR-4 board, t5 sec; 180C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol Static BVDSS BVDSS/Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. 20 0.5 Typ. 0.02 7 230 55 40 6 8 10 3 4 0.7 2 1.1 16 8 Max. 1.2 100 1 10 75 125 370 7 1.7 1.2 Unit V V/C V nA A A m S Test Conditions VGS=0, ID=250A Reference to 25C, ID=1mA VDS=VGS, ID=250A VGS=12V, VDS=0 VDS=20V, VGS=0 VDS=16V, VGS=0, Tj=70C ID=3.5A, VGS=4.5V ID=1.2A, VGS=2.5V VDS=5V, ID=3A
*GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg Source-Drain Diode *VSD *trr *Qrr MTC3585G6
pF
VDS=20V, VGS=0, f=1MHz VDS=15V, ID=1A, VGS=5V, RG=3.3, RD=15
ns
nC V ns nC
VDS=16V, ID=3A, VGS=4.5V f=1MHz VGS=0V, IS=1.2A IS=3A, VGS=0V, dI/dt=100A/s
*Pulse Test : Pulse Width 300s, Duty Cycle2%
CYStek Product Specification
CYStech Electronics Corp.
Symbol Static BVDSS BVDSS/Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. -20 Typ. -0.01 4 270 70 55 6 17 16 5 5 1 2 20 15 Max. -1.2 100 -1 -25 120 160 300 430 8 -1.2 Unit V V/C V nA A A m S
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 3/8
P-Channel Electrical Characteristics (Tj=25C, unless otherwise specified)
Test Conditions VGS=0, ID=-250A Reference to 25C, ID=-1mA VDS=VGS, ID=-250A VGS=12V, VDS=0 VDS=-20V, VGS=0 VDS=-16V, VGS=0, Tj=70C ID=-2.8A, VGS=-10V ID=-2.5A, VGS=-4.5V ID=-2A, VGS=-2.5V VDS=-5V, ID=-2A
*GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr -
pF
VDS=-20V, VGS=0, f=1MHz VDS=-10V, ID=-1A, VGS=-10V, RG=3.3, RD=10
ns nC
VDS=-16V, ID=-2A, VGS=-4.5V
V ns nC
VGS=0V, IS=-1.2A IS=-2A, VGS=0V, dI/dt=100A/s
*Pulse Test : Pulse Width 300s, Duty Cycle2%
MTC3585G6
CYStek Product Specification
CYStech Electronics Corp.
N-channel Characteristic Curves
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 4/8
MTC3585G6
CYStek Product Specification
CYStech Electronics Corp.
N-channel Characteristic Curves(Cont.)
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 5/8
MTC3585G6
CYStek Product Specification
CYStech Electronics Corp.
P-channel Characteristic Curves
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 6/8
MTC3585G6
CYStek Product Specification
CYStech Electronics Corp.
P-channel Characteristic Curves(Cont.)
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 7/8
MTC3585G6
CYStek Product Specification
CYStech Electronics Corp.
TSOP-6 Dimension
Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 8/8
Marking:
Style: Pin 1. Gate1 (G1) Pin 2. Source2 (S2) Pin 3. Gate2 (G2) Pin 4. Drain2 (D2) Pin 5. Source1 (S1) Pin 6. Drain1 (D1)
Device Name Date Code
3585
6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6
DIM A B C D d1 d2 E F
Inches Min. Max. 0.1063 0.1220 0.1024 0.1181 0.0551 0.0709 0.0748 REF 0.0374 REF 0.0374 REF 0.0118 0.0197 0.0276 0.0394
Millimeters Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.90 REF 0.95 REF 0.95 REF 0.30 0.50 0.70 1.00
DIM G H I J K L M
Inches Min. Max. 0 0.0039 0.0098 0.0047 REF 0.0177 REF 0.0236 REF 0 10 0.0433
Millimeters Min. Max. 0 0.10 0.25 0.12 REF 0.45 REF 0.60 REF 0 10 1.10
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
* Lead : 42 Alloy ; pure tin plated * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC3585G6
CYStek Product Specification

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